Apparatus for random access memory array self-repair

ABSTRACT

An apparatus for the on-chip, soft repair of random access memory arrays. In repesentative embodiments, circuitry is disclosed which provides the ability to soft repair defective random access memory arrays. The disclosed techniques for repair of random access memory arrays do not use techniques such as laser repair in the removal of defective parts of the integrated circuit and its replacement with a redundant part. No additional processing steps are involved. The circuitry necessary to repair defects in random access memory arrays is included on-chip in the input/output blocks of the RAM.

FIELD OF THE INVENTION

The present invention relates generally to random access memories (RAM)in integrated circuits and, more particularly, to the test of suchcircuits and, even more particularly, to their test and repair on-chip.

BACKGROUND OF THE INVENTION

Motivated by the desire for both lower cost and higher performance,integrated circuit (IC) technology has moved throughout its historytoward building larger and larger circuits comprising more and moredevices. The development of random access memory (RAM) integratedcircuits have shared in this movement. In the sense of containing alarger number of memory cells where each cell can store one bit, thelarger a RAM becomes, the more difficult and expensive it is to test it.Also, the more expensive the cost of a defect in the circuit, as asingle defect can result in the loss of the whole chip.

Not only are RAM's fabricated as stand-alone chips, but they are alsobuilt embedded as function blocks in other integrated circuits. Suchintegrated circuits could be designed and produced as standard chipsintended for a variety of applications and as application specificintegrated circuits (ASIC's).

With the size and complexity of modern integrated circuits includingRAM's, testing has become an important issue. Size and cost constraintslimit the area on the integrated circuit available for use as wirebonding pads, flip-chip solder bumps, and the like with the resultanteffect of limiting access to the various functioning areas of the chip.So, not all functions of the chip are externally available for directtest. Even if connections to some of these areas were available, thelong traces and additional external circuitry necessary to access themwould introduce signal delays that could render the results of suchtesting questionable. Thus of necessity, some testing circuitry is nowoften included on-chip.

On-chip testing also has its share of difficulties as chip areaavailable for testing is limited, as is accessibility to nodes fortesting. Delays introduced by trace lengths also continue to be anissue. In addition unless the chip is designed for mass production, thecosts associated with design, manufacturing, and test can beprohibitive.

Additional, redundant circuitry is often included in large integratedcircuits. Techniques available, as for example laser fusing, permit theremoval of defective parts of the IC and its replacement with theredundant part. This process is cost effective, since on average theadded cost of the redundant circuitry is less than the cost associatedwith the yield loss without the additional circuitry. The addition ofredundant circuitry is especially valuable for circuits with repeatingstructure function blocks, such as RAM and other types of memory. Insuch circuits a limited number of defective cells can be replaced withthe redundant cells embedded in the circuitry. Once again, however,unless the chip is designed for mass production, design costs can beprohibitive.

Thus since current techniques for repairing defective cells in RAMfunction blocks typically require additional processing to correct thesedefects, there is a need for enhanced means for correcting such defects.

SUMMARY OF THE INVENTION

In one representative embodiment, an electronic circuit for self-repairof a random access memory array is disclosed wherein the random accessarray has a plurality of memory storage cells, wherein the storage cellsare organized into a plurality of slice arrays. The electronic circuitincludes a remap register associated with each slice array, a remapselector circuit associated with each slice array, a write selectorcircuit associated with each slice array, and a read selector circuitassociated with each slice array. When a defect is present in one of thememory storage cells of bit-slice, the remap register informs the remapselector circuit of the defect. When, the remap selector circuit isinformed that the defect is present, the remap selector circuitinstructs the write selector circuit to redirect data intended forstorage in the slice array to an adjacent slice array, otherwise, theremap selector circuit instructs the write selector circuit to directdata intended for storage in the slice array to that slice array. When,the remap selector circuit is informed that the defect is present, theremap selector circuit instructs the read selector circuit to redirectdata read from the adjacent slice array to the output of slice array,otherwise, the remap selector circuit instructs the read selectorcircuit to direct data read from the slice array to that slice array.

Other aspects and advantages of the present invention will becomeapparent from the following detailed description, taken in conjunctionwith the accompanying drawings, illustrating by way of example theprinciples of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings provide visual representations which will beused to more fully describe the invention and can be used by thoseskilled in the art to better understand it and its inherent advantages.In these drawings, like reference numerals identify correspondingelements and:

FIG. 1 is a diagram of the architecture of a RAM circuit as described invarious representative embodiments consistent with the teachings of theinvention.

FIG. 2 is a block diagram of an electronic test circuit as described invarious representative embodiments consistent with the teachings of theinvention.

FIG. 3 is another block diagram of the electronic test circuit asdescribed in various representative embodiments consistent with theteachings of the invention.

FIG. 4 is a block diagram of circuitry for RAM self-repair as describedin various representative embodiments consistent with the teachings ofthe invention.

FIG. 5 is another block diagram of circuitry for RAM self-repair asdescribed in various representative embodiments consistent with theteachings of the invention.

FIG. 6 is yet another block diagram of circuitry for RAM self-repair asdescribed in various representative embodiments consistent with theteachings of the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

As shown in the drawings for purposes of illustration, the presentpatent document relates to novel apparatus for the automatic testing ofRAM circuits on-chip. Previous circuitry for on-chip testing haverequired substantial area on the integrated circuit (IC) chip and havebeen somewhat removed from the tested area introducing propagation delayerrors. By locating the circuitry necessary to perform such test in theaddressing and input/output blocks of the RAM, these problems have beenreduced.

Also, as shown in the drawings for purposes of illustration, the presentpatent document relates to novel apparatus for the repair of defectiveRAM circuits. Previous methods for repair of RAM circuits have typicallyused techniques such as laser repair which permit the removal ofdefective parts of the integrated circuit chip and then replacement witha redundant part. However, this process is expensive as an additionalprocessing step is involved. By including the circuitry necessary torepair defects in RAM circuits in the input/output blocks of the RAM,this problem has been negated.

In the following detailed description and in the several figures of thedrawings, like elements are identified with like reference numerals.

1. RAM Architecture

FIG. 1 is a diagram of the architecture of a RAM circuit 105 asdescribed in various representative embodiments consistent with theteachings of the invention. In FIG. 1, memory storage cells 110, alsoreferred to herein as storage cells 110 and more concisely as cells 110,are indicated by small squares. For ease of illustration, only onestorage cell 110 is labeled in FIG. 1.

A representative example RAM memory, which is not that shown in FIG. 1,could comprise logically 416 words with 50 bits of data in each word.Using bit-slice architecture for such an example, a slice of cells iscreated in which each slice represents one bit of data but it is 416words. During the design phase, a slice is created that is 416 bits highby one bit wide. This slice is then duplicated 50 times to create thecomplete array. This methodology creates a very tall and fairly narrowarray for this example.

By designing the RAM array wherein bits occupying an identical ordinalpositional in nearby words are moved to adjacent horizontal positions, abetter aspect ratio for the array can be obtained. In the example ofFIG. 1, each bit-slice 115 contains eight cells 110 in width instead ofone. The array now is only 52 words tall with each word still 50 bitswide. Words now, however, are interleaved on the same row. The aspectratio of the storage array has become more square in the processresulting in a more compact design. A more compact design is preferableas designs that have long traces running vertically between cells couldprevent the RAM from functioning properly at the speeds needed.

The RAM circuit 105 of FIG. 1 includes a RAM array 250, also referred toherein as a random access memory array 250, for storing data. The RAMarray 250 is divided into sections referred to herein as slice arrays118 wherein each slice array 118 includes an associated group of memorystorage cells 110

Also shown in FIG. 1, each bit-slice 115 includes an I/O circuit 130, aswell as the associated slice array 118. A control and address block 205comprises a control circuit 210 and an address selection circuit 120.The control circuit 210 controls test initiation and progress. Theaddress selection circuit 120 enables the selection of memory storagecells 110 for reading and writing of data. In addition, FIG. 1 showserror detection circuit 230 which has inputs from the I/O circuits 130and outputs information regarding any errors found during the test tothe control circuit 210.

2. Overview of Self Test Circuitry

FIG. 2 is a block diagram of an electronic test circuit 200 as describedin various representative embodiments consistent with the teachings ofthe invention. The electronic test circuit 200 is also referred toherein as electronic circuit 200. The electronic test circuit 200 can bebuilt into the address and I/O circuitry of the RAM circuit 105 and canbe programmed to test every cell 110 of the RAM array 250 at wafer test,package test, power-up, as well as other times. The electronic testcircuit 200 includes the control circuit 210 which controls the flow ofthe built-in test and the address selection circuit 120 described above.Data is written into and read out of the bit-slices 115 through the I/Ocircuit 130 of each bit-slice 115. The results of comparing the datawritten into the bit-slice 115 and that read out of it is reported tothe error detection circuit 230 which reports those results back to thecontrol circuit 210.

FIG. 3 is another block diagram of the electronic test circuit 200 asdescribed in various representative embodiments consistent with theteachings of the invention. In FIG. 3, the various components of thetest circuit 200 have been interconnected with other circuits normallypresent in RAM circuits 105.

3. Detail of Self Test Circuitry—Control Circuit

The control circuit 210 controls the execution of the test that isperformed on the RAM array 250. As shown in FIG. 3, the control circuit210, has first, second, and third control-circuit inputs 336,337,338 andfirst, second, third, fourth, and fifth control-circuit outputs341,342,343,344,345. While shown as a single line, some of theseinterconnection may, in fact, be multiple wires.

There are a variety of industry standard tests some of which arereferred to as March tests that can be employed to test the RAM array250. The March Tests writes preselected patterns in a preselected orderinto the RAM array 250 and then reads them back out to verify theintegrity of the memory storage cells 110. Different March tests performtheir tests in a variety of ways such as whether the test sweeps up ordown thru the address space of the RAM array 250 and the number of timesthat the test is repeated. The test or tests performed, however, couldbe other than a March test. Regardless of the test performed, it is thecontrol circuit 210 that controls the test.

As the control circuit 210 interacts with the other elements performingthe test, various functions and aspects of the control circuit 210 willbe discussed in connection with those other elements.

4. Detail of Self Test Circuitry—Test Address Selection Circuit

The address selection circuit 120 comprises a sequencer 355, an addressmultiplexer 365, a RAM address register 305, and a comparator 375.

The control circuit 210 sends a first command 350 to the sequencer 355at a sequencer control input 356 of the sequencer 355. The sequencer 355also has sequencer data input 357 and a sequencer output 358. Thesequencer 355 increments or decrements a memory address 360, wherein thememory address 360 is the memory address of the cell 110 selected fortest and stored in the RAM address register 305. The result of theincrementation/decrementation, i.e., the output value of the sequencer355, is referred to as an indexed memory address 361. Incrementation anddecrementation can occur in random or in a preselected pattern, thesimplest being to increment or decrement by a single address space. Thesequencer control input 356 receives various commands from the firstcontrol-circuit output 341 of the control circuit 210. One of thesecommands is a command to increment. When the increment command isreceived, the sequencer 355 increments the memory address 360. Anotherof these commands is a command to decrement. When the decrement commandis received, the sequencer 355 decrements the memory address 360.

The second control-circuit output 342 transmits a second command 363which is received by the address multiplexer 365 on anaddress-multiplexer control input 366. The address multiplexer 365 alsohas first, second and third address-multiplexer data inputs 367,368,369and an address-multiplexer output 370. The first address-multiplexerdata input 367 receives the incremented/decremented memory address 360from the sequencer output 358. The second address-multiplexer data input368 receives an initial self-test memory address 372, wherein theinitial self-test memory address 372 is the memory address 360 of thefirst cell 110 selected for test. The third address-multiplexer datainput 369 receives RAM memory storage cell 110 addresses during normaloperation of the RAM circuit 105.

When the second command 363 instructs the address multiplexer 365 toselect the first address-multiplexer data input 367 as its active input,the address multiplexer 365 transfers contents of the firstaddress-multiplexer data input 367 to the address-multiplexer output370. When the second command 363 instructs the address multiplexer 365to select the second address-multiplexer data input 368 as its activeinput, the address multiplexer 365 transfers contents of the secondaddress-multiplexer data input 368 to the address-multiplexer output370. And, when the second command 363 instructs the address multiplexer365 to select the third address-multiplexer data input 369 as its activeinput, the address multiplexer 365 transfers contents of the thirdaddress-multiplexer data input 369 to the address-multiplexer output370. The address-multiplexer output 370 transfers its contents to theRAM address register 305.

The comparator 375 receives the contents of the RAM address register 305on a first comparator input 376. The comparator 375 also has a firstcomparator output 377 and a second comparator output 378. The comparator375 compares the contents of the RAM address register 305 to the initialself-test memory address 372 and to a final self-test memory address379. Final self-test memory address 379 is not shown on any of thedrawings. For comparison purposes, both the initial self-test memoryaddress 372 and the final self-test memory address 379 could be, forexample, hard wired into the comparator 375, obtained from the controlcircuit 210, or obtained by other means. When the contents of the RAMaddress register 305 is the same as the initial self-test memory address372, the first comparator output 377 is set to indicate that thecontents of the RAM address register 305 is the same as the initialself-test memory address 372, i.e., at the beginning of the test. Whenthe contents of the RAM address register 305 is the same as the finalself-test memory address 379, the second comparator output 378 is set toindicate that the contents of the RAM address register 305 is the sameas the final self-test memory address 379, i.e., the end of test hasbeen reached.

The first control-circuit input 336 receives the contents of the firstcomparator output 377. When the first comparator output 377 indicatesthat the contents of the RAM address register 305 is the same as theinitial self-test memory address 372, the control circuit 210 is soinformed at first control-circuit input 336. When the second comparatoroutput 378 indicates that the contents of the RAM address register 305is the same as the final self-test memory address 379, the controlcircuit 210 is so informed at second control-circuit input 337. Thecontrol circuit 210 may sweep through various test sequences and mayrepeat those test sequences in various orders before it terminates thetest.

An important characteristic of the control circuit 210 is that it isindependent of the size of the RAM. It has no knowledge or dependence onthe size of RAM addressing. It uses the initial self-test memory address372 comparison result as reported at the first comparator output 377 andthe final self-test memory address 379 comparison result as reported atthe second comparator output 378 to tell it where to start and where tostop testing. As a result, once designed the control circuit 210 can beused again and again for different RAM blocks on different integratedcircuit chips.

5. Detail of Self Test Circuitry—I/O Circuit

Again in FIG. 3, various components of the test circuit 200 have beeninterconnected with other circuits normally present in RAM circuits 105.During normal operation, operational data 380 is inputted into inputregister 381 and is written into the slice array 118. Data is retrievedfrom the slice array 118 and written into output register 383.

The I/O circuit 130 comprises components common to the bit-slice 115,the input register 381 and the output register 383, as well as a data-inmultiplexer 1305, an inverter 1315, an input-complement multiplexer1320, an output-complement multiplexer 1330, and an exclusive-OR gate1340. All components are present in the I/O circuit 130 regardless ofwhether tests are being performed or normal data operations areprogressing. The data is merely routed according to the operating mode.An input path from the input-complement multiplexer 1320 to the slicearray 118 and an output path from the slice array 118 to the outputregister 383 are shown in FIG. 3. However, in other embodiments bothpaths could time share the same transmission path.

The data-in multiplexer 1305 has first and second data-in-multiplexerdata inputs 1306,1307, a data-in-multiplexer control input 1308, and adata-in-multiplexer output 1309. The first data-in-multiplexer datainput 1306 receives a test data 1310, and the second data-in-multiplexerdata input 1307 receives operational data 380.

When the control circuit 210 instructs the data-in multiplexer 1305 thatit is executing the test, the third control-circuit output 343 transmitsa command to the data-in-multiplexer control input 1308 to select thefirst data-in-multiplexer data input 1306 as the active input and totransfer contents of the first data-in-multiplexer data input 1306 tothe data-in-multiplexer output 1309. Otherwise, the thirdcontrol-circuit output 343 transmits a command to thedata-in-multiplexer control input 1308 to select the seconddata-in-multiplexer data input 1307 as the active input and to transfercontents of the second data-in-multiplexer data input 1307, i.e., normaloperational data 380, to the data-in-multiplexer output 1309. Thedata-in-multiplexer control input 1308 is preferably two bits wide toaccommodate the required commands.

The input register 381 receives data from the data-in-multiplexer output1309, and the inverter 1315 receives data from the input register 381.

The input-complement multiplexer 1320 has first and secondinput-complement-multiplexer data inputs 1321,1322, aninput-complement-multiplexer control input 1323, and aninput-complement-multiplexer output 1324. The firstinput-complement-multiplexer data input 1321 receives data from theinput register 381, and the second input-complement-multiplexer datainput 1322 receives the output of the inverter 1315.

The output-complement multiplexer 1330 has first and secondoutput-complement-multiplexer data inputs 1331,1332, anoutput-complement-multiplexer control input 1333, and anoutput-complement-multiplexer output 1334. The firstoutput-complement-multiplexer data input 1331 receives data from theinput register 381, and the second output-complement-multiplexer datainput 1332 receives the output of the inverter 1315.

When the control circuit 210 instructs the input-complement multiplexer1320 that it is to write the test data 1310, the fourth control-circuitoutput 344 transmits a command to the input-complement-multiplexercontrol input 1323 to select the first input-complement-multiplexer datainput 1321 as the active input and to transfer contents of the firstinput-complement-multiplexer data input 1321 to theinput-complement-multiplexer output 1324. When the control circuit 210instructs the input-complement multiplexer 1320 that it is to write theinverse test data, the fourth control-circuit output 344 transmits acommand to the input-complement-multiplexer control input 1323 to selectthe second input-complement-multiplexer data input 1322 as the activeinput and to transfer contents of the secondinput-complement-multiplexer data input 1322 to theinput-complement-multiplexer output 1324.

During normal operation, i.e., not test, the input-complementmultiplexer 1320 transfers operational data 380 stored in the inputregister 381 from first input-complement-multiplexer data input 1321 tothe input-complement-multiplexer output 1324.

The output-complement multiplexer 1330 and the exclusive-OR gate 1340are used to compare the data read from the slice array 118 with theexpected value as stored in the input register 381.

The output-complement multiplexer 1330 has first and secondoutput-complement-multiplexer data inputs 1331,1332, theoutput-complement-multiplexer control input 1333, and theoutput-complement-multiplexer output 1334. The firstoutput-complement-multiplexer data input 1331 receives data from theinput register 381, and the second output-complement-multiplexer datainput 1332 receives the output of the inverter 1315.

When the control circuit 210 instructs the output-complement multiplexer1330 that it is to select the test data for comparison which is storedin the input register 381, the fifth control-circuit output 345transmits command to the output-complement-multiplexer control input1333 to select the first output-complement-multiplexer data input 1331as the active input and to transfer contents of the input register 381to the output-complement-multiplexer output 1334, otherwise the fifthcontrol-circuit output 345 transmits command to theoutput-complement-multiplexer control input 1333 to select the secondoutput-complement-multiplexer data input 1332 as the active input and totransfer contents of the inverter output 1315 to theoutput-complement-multiplexer output 1334. During normal operation, itis irrelevant whether first output-complement-multiplexer data input1331 or second output-complement-multiplexer data input 1332 istransferred to the output-complement-multiplexer output 1334. However,in the representative embodiment, the firstoutput-complement-multiplexer data input 1331 is transferred to theoutput-complement-multiplexer output 1334.

The exclusive-OR gate 1340 has first and second exclusive-OR-gate inputs1341,1342 and an exclusive-OR-gate output 1343. The firstexclusive-OR-gate input 1341 receives data from the output register 383,and the second exclusive-OR-gate input 1342 receives theoutput-complement-multiplexer output 1334.

The exclusive-OR gate 1340 is used to compare the data read from theslice array 118, which is stored in the output register 383 andpresented to the first exclusive-OR-gate input 1341 with the expectedvalue which is stored in the input register 381 and presented to thesecond exclusive-OR-gate input 1342. When the data in the outputregister 383 matches that of the expected data the exclusive-OR gate1340 outputs a binary zero to the exclusive-OR-gate output 1343indicating a success. Otherwise, the exclusive-OR gate 1340 outputs abinary one to the exclusive-OR-gate output 1343 indicating a failure.

6. Detail of Self Test Circuitry—Error Detection Circuit

The error detection circuit 230 has a plurality of error detectioncircuit inputs 231 and a single error detection circuit output 232. Theoutput of each exclusive-OR-gate output 1343 is transferred to itsassociated error detection circuit input 231. The error detectioncircuit 230 combines the results of the exclusive-OR gates 1340 forevery bit-slice 115 and reports the result to the control circuit 210via the error detection circuit output 232 to the third control-circuitinput 338.

7. Redundant RAM Model

FIG. 4 is a block diagram of circuitry for RAM self-repair as describedin various representative embodiments consistent with the teachings ofthe invention. In FIG. 4, the RAM array 250 is divided into bit-slices115, each of which includes its associated slice array 118 and I/Ocircuit 130 as previously stated. The RAM array 250 also comprises aredundant slice 410. Should the RAM array 250 not have any defects, theredundant slice 410 is not used. However, should a defect beencountered, data flow is routed around the bit-slice 115 containing thedefect, and the redundant slice 410 is used in its place. The followingerror types, which are the five most common defect mechanisms, can becorrected using the techniques disclosed herein: (1) single bit, (2)paired bit (two adjacent bits within the same slice), (3) single column,and (4) paired column (two adjacent columns within the same slice), and(5) slice. Essentially any and all defects occurring in the same slicecan be repaired as repair occurs via a remapping of slices.

In the example of FIG. 4, the bit-slice 115 corresponding to k-thbit-slice 115 contains a defect 415 which is corrected by reroutingbit-slice I/O for all bit-slices 115 to the right of and including thebit-slice 115 for the k-th bit-slice 115. Each bit-slice comprises twoI/O paths, a normal bit-slice I/O path 420 and a alternate bit-slice I/Opath 425. Bit-slices 115 to the left of the bit-slice 115 containing thedefect 415 utilize their normal bit-slice I/O paths 420 for input/outputof those bit-slices 115. The bit-slice 115 containing the defect 415 andall bit-slices 115 to the right of that bit-slice 115 utilize theiralternate bit-slice I/O paths 425 for input/output of those bit-slices115. Thus, all bit-slices 115 to the right of the bit-slice 115containing the defect 415, as well as the redundant slice 410, aremapped to the I/O circuit 130 to their immediate left.

8. Overview of Redundant RAM Circuitry

FIG. 5 is another block diagram of circuitry for RAM self-repair asdescribed in various representative embodiments consistent with theteachings of the invention. As in FIG. 4, it is assumed that a defectoccurs in the k-th slice array 118. In such case, a remap register 515for the k-th bit-slice 115 informs remap selector circuit 520 toredirect data for the k-th bit-slice 115 to the (k−1)-th bit-slice 115for storage in the (k−1)-th slice array 118. The remap selector circuit520 in turn instructs a write selector circuit 505 for the k-thbit-slice 115 to write the data for the k-th bit-slice 115 into the(k−1)-th slice array 118.

The remap register 515 for the k-th bit-slice 115 informs remap selectorcircuit 520 to redirect data read from the (k−1)-th slice array 118 tothe k-th bit-slice 115 for transfer out. The remap selector circuit 520in turn instructs a read selector circuit 510 for the k-th bit-slice 115to read the data for the k-th bit-slice 115 from the (k−1)-th slicearray 118.

FIG. 6 is yet another block diagram of circuitry for RAM self-repair asdescribed in various representative embodiments consistent with theteachings of the invention. FIG. 6 shows various circuitry from previousfigures. In particular this circuitry includes (1) the input register381, (2) the input-complement multiplexer 1320, (3) theoutput-complement multiplexer 1330, (4) the slice array 118, (5) theoutput register 383, and (6) the exclusive-OR gate 1340.

In addition to the circuitry used for normal RAM read/write functionsand defect detection, circuitry necessary for defect repair is asfollows: (1) a write multiplexer 605, (2) a read multiplexer 610, (3)the remap register 515, and (4) an OR gate 620. The write multiplexer605 has first and second write-multiplexer inputs 606,607, awrite-multiplexer control input 608, and a write-multiplexer output 609.The read multiplexer 610 has first and second read-multiplexer inputs611,612, a read-multiplexer control input 613, and a read-multiplexeroutput 614. The remap register 515 has a remap-register input 616 and aremap-register output 617. The OR gate 620 has first and second OR-gateinputs 621,622 and an OR-gate output 623.

As long as no defects 415 occur to the left of or in bit-slice “k” 115in FIG. 6, the write multiplexer 605 is enabled so as to writeoperational data 380 from the input register 381 into its associatedbit-slice 115 through input-complement multiplexer 1320. The function ofinput-complement multiplexer 1320 was explained in the discussion ofFIG. 3. Also, the read multiplexer 610 is enabled so as to read datastored in the associate RAM bit-slice 115 into the output register 383associated with that RAM bit-slice 115. When the output of the OR gate620, identified as OR-gate output 623, is a binary zero, both inputs tothe OR gate 620, identified as first OR-gate input 621 and secondOR-gate input 622, are binary zero. The binary zero at the first OR-gateinput 621 indicates that no defects were found in any of the bit-slices115 to the left of the k-th bit-slice 115, and the binary zero at thesecond OR-gate input 622 indicates that the k-th bit-slice 115 is freeof defects 415. The fact that no defects 415 were found in the k-thbit-slice 115 during the test phase is recorded in the remap register515 by storing a binary zero in it.

If, however, a defect 415 occurs in the k-th bit-slice 115 that fact isrecorded in remap register 515. The fact that defect 415 is present inthe k-th bit-slice 115 would have been detected during the test phase.In a representative application, the remap register 515 then would havea binary one value stored in it. The OR-gate output 623 then becomes abinary one which switches the k-th write multiplexer 605 to write thevalue from the (k+1)-th input register 381 into the memory of the k-thbit-slice 115. This action is, however, of no consequence as any data inthe k-th bit-slice 115 will be ignored since it is known to have thedefect 415. Of more importance is the fact that the read multiplexercontrol input switches the read multiplexer 610 for the k-th bit-slice115 to read data from the (k−1)-th bit-slice 115 into the outputregister 383 for the k-th bit-slice 115 instead of the (k−1)-thbit-slice 115.

Since the OR-gate output 623 for the k-th bit-slice 115 provides thefirst OR-gate input 621, the OR-gate output 623 for the (k−1)thbit-slice 115 becomes a binary one indicating that the defect 415occurred in a bit-slice 115 prior to that of the (k−1)th bit-slice 115.This value for the output of the OR gate 620 for the (k−1)th bit-slice115 switches the write multiplexer 605 for the (k−1)-th bit-slice 115 towrite the operational data 380 from the input register 381 of the k-thbit-slice 115 to be written into the memory of the (k−1)-th bit-slice115.

In a manner similar to that described above, the data stored in the(k−2)th bit-slice 115 will be read out by the read multiplexer 610 ofthe (k−1)-the bit-slice 115 into the output register 383 of the (k−1)-thbit-slice 115. Thus, all remapping of data for both read and writefunctions is programmed into the remap registers 515 when the RAM array250 is tested.

9. Concluding Remarks

In representative embodiments of the apparatus described in the presentpatent document, techniques for the on-chip testing of RAM circuitson-chip are disclosed. Present techniques for on-chip testing do notrequire substantial area on the chip and are inherently located closerto the tested area which reduces propagation delay errors. By locatingthe circuitry necessary to perform such test in the addressing andinput/output blocks of the RAM, these advantages have been obtained.

In other representative embodiments of the apparatus described in thepresent patent document, techniques for the soft repair of defective RAMcircuits are disclosed. Present techniques for repair of RAM circuits donot use techniques such as laser repair in the removal of defectiveparts of the IC and its replacement with a redundant part. The presentprocess is inexpensive and no additional processing steps are involved.By including the circuitry necessary to repair defects in RAM circuitsin the input/output blocks of the RAM, these advantages have beenobtained.

While the present invention has been described in detail in relation torepresentative embodiments thereof, the described embodiments have beenpresented by way of example and not by way of limitation. It will beunderstood by those skilled in the art that various changes may be madein the form and details of the described embodiments resulting inequivalent embodiments that remain within the scope of the appendedclaims.

What is claimed is:
 1. An electronic circuit for self-repair of a randomaccess memory array having a plurality of memory storage cells, whereinthe memory storage cells are organized into a plurality of slice arrays,and wherein the random access memory array comprises at least oneredundant slice array, comprising: a write selector circuit associatedwith each slice array, wherein: when, a defect is present in one of theslice arrays, the write selector circuit redirects data intended forstorage in the defective slice array to an adjacent slice array,otherwise, the write selector circuit directs data intended for storagein the slice array to that slice array; a read selector circuitassociated with each slice array, wherein: when, the defect is present,the read selector circuit redirects data read from the adjacent slicearray to the output of the defective slice array, otherwise, the readselector circuit directs data read from the slice array to the output ofthe slice array; and a remap register associated with each slice array;and a remap selector circuit associated with each slice array, whereinwhen the defect is present in one of the slice arrays, the remapregister informs the remap selector circuit of the defect, wherein:when, the remap selector circuit has been informed that the defect ispresent, the remap selector circuit instructs the write selector circuitto redirect data intended for storage in the defective slice array tothe adjacent slice array, otherwise, the remap selector circuitinstructs the write selector circuit to direct data intended for storagein the slice array to that slice array, and wherein: when, the remapselector circuit has been informed that the defect is present, the remapselector circuit instructs the read selector circuit to redirect dataread from the adjacent slice array to the output of the defective slicearray, otherwise, the remap selector circuit instructs the read selectorcircuit to direct data read from the slice array to the output of theslice array.
 2. The electronic circuit as recited in claim 1, whereinthe remap selector circuit associated with each slice array comprises anOR gate, wherein the OR gate has a first OR-gate input, a second OR-gateinput, and an OR-gate output, wherein the first OR-gate input isconnected to the OR-gate output associated with the adjacenthigher-numbered slice array, wherein the second OR-gate input isconnected to the output of the remap register, and wherein the OR-gateoutput is connected to the input of the write selector circuit and theread selector circuit.
 3. The electronic circuit as recited in claim 2,wherein the write selector circuit associated with each slice arraycomprises a write multiplexer, wherein the write multiplexer has a firstwrite-multiplexer input, a second write-multiplexer input, awrite-multiplexer control input, and a write-multiplexer output, whereinthe write-multiplexer control input is connected to the output of theremap selector circuit, wherein the first write-multiplexer input isconnected to the second write-multiplexer input associated with theadjacent higher-numbered slice array, wherein the secondwrite-multiplexer input is connected to an output of an input register,and wherein the write-multiplexer output is capable of transferring datato the slice array.
 4. The electronic circuit as recited in claim 2,wherein the read selector circuit associated with each slice arraycomprises a read multiplexer, wherein the read multiplexer has a firstread-multiplexer input, a second write-multiplexer input, aread-multiplexer control input, and a read-multiplexer output, whereinthe read-multiplexer control input is connected to the output of theremap selector circuit, wherein the first read-multiplexer input iscaple of obtaining data from the slice array, wherein the secondread-multiplexer input is connected to the first read-multiplexer inputassociated with the adjacent lowered-numbered slice array, and whereinthe read-multiplexer output is capable of transferring data to an outputregister.
 5. The electronic circuit as recited in claim 2, wherein theelectronic circuit is embedded within a bit-slice in an integratedcircuit, wherein the bit-slice comprises the slice array and othercircuitry associated with the slice array.
 6. The electronic circuit asrecited in claim 2, wherein when the defect is present: for each slicearray subsequent to the slice array in which the defect is present, theremap selector circuit instructs the write selector circuit to redirectdata intended for storage in that slice array to its adjacent slicearray, and for each slice array subsequent to the slice array in whichthe defect is present, the remap selector circuit instructs the readselector circuit to redirect data read from its adjacent slice array tothe output of the slice array.
 7. An electronic circuit for self-repairof a random access memory array having a plurality of memory storagecells, wherein the memory storage cells are organized into a pluralityof slice arrays and wherein the random access memory array comprises atleast one redundant slice array, comprising: a remap register associatedwith each slice array; a remap selector circuit associated with eachslice array, wherein when a defect is present in the slice array, theremap register informs the remap selector circuit of the defect; a writeselector circuit associated with each slice array, wherein: when, theremap selector circuit has been informed that the defect is present, theremap selector circuit instructs the write selector circuit to redirectdata intended for storage in the slice array to an adjacent slice array,otherwise, the remap selector circuit instructs the write selectorcircuit to direct data intended for storage in the slice array to thatslice array; and a read selector circuit associated with each slicearray, wherein the remap selector circuit associated with each slicearray comprises an OR gate, wherein the OR gate has a first OR-gateinput, a second OR-gate input, and an OR-gate output, wherein the firstOR-gate input is connected to the OR-gate output associated with theadjacent higher-numbered slice array, wherein the second OR-gate inputis connected to the output of the remap register, and wherein theOR-gate output is connected to the input of the write selector circuitand the read selector circuit, and wherein: when, the remap selectorcircuit has been informed that the defect is present, the remap selectorcircuit instructs the read selector circuit to redirect data read fromthe adjacent slice array to the output of the slice array, otherwise,the remap selector circuit instructs the read selector circuit to directdata read from the slice array to the output of the slice array.
 8. Anelectronic circuit for self-repair of a random access memory arrayhaving a plurality of memory storage cells, wherein the memory storagecells are organized into a plurality of slice arrays, and wherein therandom access memory array comprises at least one redundant slice array,comprising: a remap register associated with each slice array; a remapselector circuit associated with each slice array, wherein when a defectis present in the slice array, the remap register informs the remapselector circuit of the defect; a write selector circuit associated witheach slice array, wherein the write selector circuit associated witheach slice array comprises a write multiplexer, wherein the writemultiplexer has a first write-multiplexer input, a secondwrite-multiplexer input, a write-multiplexer control input, and awrite-multiplexer output, wherein the write-multiplexer control input isconnected to the output of the remap selector circuit, wherein the firstwrite-multiplexer input is connected to the second write-multiplexerinput associated with the adjacent higher-numbered slice array, whereinthe second write-multiplexer input is connected to an output of an inputregister, wherein the write-multiplexer output is capable oftransferring data to the slice array, and wherein: when, the remapselector circuit has been informed that the defect is present, the remapselector circuit instructs the write selector circuit to redirect dataintended for storage in the slice array to an adjacent slice array,otherwise, the remap selector circuit instructs the write selectorcircuit to direct data intended for storage in the slice array to thatslice array; and a read selector circuit associated with each slicearray, wherein: when, the remap selector circuit has been informed thatthe defect is present, the remap selector circuit instructs the readselector circuit to redirect data read from the adjacent slice array tothe output of the slice array, otherwise, the remap selector circuitinstructs the read selector circuit to direct data read from the slicearray to the output of the slice array.
 9. An electronic circuit forself-repair of a random access memory array having a plurality of memorystorage cells, wherein the memory storage cells are organized into aplurality of slice arrays,and wherein the random access memory arraycomprises at least one redundant slice array, comprising: a remapregister associated with each slice array; a remap selector circuitassociated with each slice array, wherein when a defect is present inthe slice array, the remap register informs the remap selector circuitof the defect; a write selector circuit associated with each slicearray, wherein: when, the remap selector circuit has been informed thatthe defect is present, the remap selector circuit instructs the writeselector circuit to redirect data intended for storage in the slicearray to an adjacent slice array, otherwise, the remap selector circuitinstructs the write selector circuit to direct data intended for storagein the slice array to that slice array; and a read selector circuitassociated with each slice array, wherein the read selector circuitassociated with each slice array comprises a read multiplexer, whereinthe read multiplexer has a first read-multiplexer input, a secondread-multiplexer input, a read-multiplexer control input, and aread-multiplexer output, wherein the read-multiplexer control input isconnected to the output of the remap selector circuit, wherein the firstread-multiplexer input is capable of obtaining data from the slicearray, wherein the second read-multiplexer input is connected to thefirst read-multiplexer input associated with the adjacentlowered-numbered slice array, wherein the read-multiplexer output iscapable of transferring data to an output register, and wherein: when,the remap selector circuit has been informed that the defect is present,the remap selector circuit instructs the read selector circuit toredirect data read from the adjacent slice array to the output of theslice array, otherwise, the remap selector circuit instructs the readselector circuit to direct data read from the slice array to the outputof the slice array.
 10. An electronic circuit for self-repair of arandom access memory array having a plurality of memory storage cells,wherein the memory storage cells are organized into a plurality of slicearrays, and wherein the random access memory array comprises at leastone redundant slice array, comprising: a remap register associated witheach slice array; a remap selector circuit associated with each slicearray, wherein when a defect is present in the slice array, the remapregister informs the remap selector circuit of the defect; a writeselector circuit associated with each slice array, wherein: when, theremap selector circuit has been informed that the defect is present, theremap selector circuit instructs the write selector circuit to redirectdata intended for storage in the slice array to an adjacent slice arrayand for each slice array subsequent to the slice array in which thedefect is present, the remap selector circuit instructs the writeselector circuit to redirect data intended for storage in that slicearray to its adjacent slice array, otherwise, the remap selector circuitinstructs the write selector circuit to direct data intended for storagein the slice array to that slice array; and a read selector circuitassociated with each slice array, wherein: when, the remap selectorcircuit has been informed that the defect is present, the remap selectorcircuit instructs the read selector circuit to redirect data read fromthe adjacent slice array to the output of the slice array and for eachslice array subsequent to the slice array in which the defect ispresent, the remap selector circuit instructs the read selector circuitto redirect data read from its adjacent slice array to the output of theslice array, otherwise, the remap selector circuit instructs the readselector circuit to direct data read from the slice array to the outputof the slice array.